The “Crystals and Quantum State Dynamics” team at Chimie ParisTech recently published in the journal Nanophotonics on the occasion of the special issue on the year of quantum science and technology, entitled: Quantum Light : creation, integration, and applications
Les auteurs :
- Diana SERRANO
- Nao HARADA
- Romain BACHELET
- Anna BLIN
- Alban FERRIER
- Alexey TIRANOV
- Tian ZHONG
- Philippe GOLDNER
- Alexandre TALLAIRE.
Thin films offer nanoscale confinement while maintaining compatibility with photonic and microwave architectures, making them excellent candidates for chip-scale quantum devices. In this study, we present a thin-film fabrication method that enables the epitaxial growth of Eu³⁺-doped Y₂O₃ on silicon. Our approach integrates two leading thin-film deposition techniques: chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). We demonstrate sub-megahertz optical homogeneous linewidths for Eu³⁺ dopants in the film at temperatures up to 8 K, with a minimum value of 270 kHz. This represents a tenfold improvement over previous reports on the same material, paving the way for scalable and compact quantum devices incorporating rare-earth ions.
© Diana Serrano
Caption: Thin-film-based platform for quantum technologies, consisting of an active layer of Y₂O₃:Eu³⁺ and an intermediate layer of Gd₂O₃. Advanced optical spectroscopy studies reveal a homogeneous linewidth below MHz, measured using the spectral hole burning technique, corresponding to quantum state lifetimes on the order of a microsecond.